IRF 840 MFET FEATURES

• • Dynamic dV/dt rating
• • Repetitive avalanche rated
• • N-channel
• • Fast switching
• • Ease of paralleling
• • Simple drive requirements

TECHNICAL

• Drain-Source Voltage (VDS)  :-500V
• Gate-Source Voltage (VGS) : ± 20V
• Continuous Drain Current @TC = 25 °C : 8A.
• Continuous Drain Current @ TC = 100 °C :  5.1 A.
• Single Pulse Avalanche Energy : 510 mJ
• Maximum Power Dissipation @TC = 25 °C ; 125 W

• Soldering Temperature, for 10 seconds (1.6mm from case) 300 °C 
• Operating and Storage Temperature (TJ, TSTG) : -55 to 175 °C